note: 1. *1 maximum ambient tem p erature durin g o p eration. note: 1. measurin g methods are based on japanese industrial standard jis c 7031 measurin g methods for diodes. 2. a bsolute fre q uenc y of in p ut and out p ut is 100 mh z 3. *1 measurin g instrument:yhp model 4191a rf impedance analyze r embossed t yp e ( thermo-com p ression sealin g) : 3 000 p cs / reel junction temperature tj 150 c 1. cathode 2. anode +85 conditions -55 to +150 electrical characteristics ta = 25 c parameter symbol marking symbol : d1 rating ma forward current (dc) if 100 vr 35 v pin name absolute maximum ratings ta = 25 c parameter symbol tentative package code : ssmini2-f5-b DA2S001 silicon epitaxial planar type for band switching DA2S001 total pages page semiconductor company, panasonic corporation 2010.1.28 2010.7.29 prepared revised packing vf cd ir reverse current(dc) diode capacitance forward dynamic resistance *1 rf forward voltage(dc) unit reverse voltage(dc) storage temperature tstg c operating ambient temperature *1 topr c -25 to v 1.0 if = 2 ma, f = 100 mhz 1.2 pf 100 vr = 6 v, f = 1 mhz if = 100 ma 0.85
ssmini2-f5-b unit: mm 0 . 3 0 0 . 0 5 0 . 8 0 2 1 ( 0 . 1 5 ) 5 1 . 2 0 0 . 1 3 1 . 6 0 0 . 0 5 0 . 2 0 0 . 0 5 5 +0.05 -0.03 +0.05 -0.03 +0.05 -0.02 0 t o 0 . 0 5 0 . 6 0 +0.05 -0.03
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